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Semiconductor growth and junction formation within nano-porous oxides
We have developed semiconductor growth techniques for the coating and filling of nanopores in ceramic-type substrates. The main idea behind this research is to use the large inner surface of ceramics as a template for the realization of semiconductor heterojunctions with extremely large interface area. As porous substrates we use lightly sintered nanocrystalline TiO2 of 5-10 mum thickness. The pore volume in these substrates is approx. 50% and the average pore diameter is 30-50 nm. We are able to establish nanometer thick coatings on the inner surfaces of these substrates or – in a different technique – fill the pore volume with (100 ¡À 3)% efficiency. The growth techniques involve chemical and electrochemical methods from liquid solutions. Binary, ternary and, most recently, quaternary compounds of the II-VI and I-III-VI material systems were prepared.
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Reference£º
Copper catalysis in organic synthesis – NCBI,
Special Issue “Fundamentals and Applications of Copper-Based Catalysts”