Mane, Anil published the artcileCVD of thin films of copper and cobalt from different precursors: growth kinetics and microstructure, Synthetic Route of 14284-06-1, the publication is Materials Research Society Symposium Proceedings (2001), G6.11.1-G6.11.6, database is CAplus.
The authors have studied the growth of thin films of Cu and Co by CVD using the β-diketonate complexes of the metals, viz., the resp. acetylacetonates, dipivaloylmethanates, and ketocarboxylates. Film growth rate was measured as a function of CVD parameters such as substrate temperature and reactor pressure. Film microstructure was examined by optical microscopy, XRD, SEM, and STM. Elec. resistivity was measured as a function of temperature and film thickness. Film microstructure is a function of the mol. structure of the precursor and of the other growth parameters. For example, Cu films from Cu(II) ethylacetoacetate comprise uniform, fine grains which result in bulk elec. conductivity at a thickness ≥75nm. Though grown under nearly the same conditions, Cu films from Cu(II) dipivaloylmethanate are porous, with faceted, large crystallites. Co films from Co(II) acetylacetonate are x-ray amorphous even at a deposition temperature of 450°. It is possible, by choosing CVD parameters, to obtain metal films with microstructures appropriate to devices and to structures of very small dimensions.
Materials Research Society Symposium Proceedings published new progress about 14284-06-1. 14284-06-1 belongs to copper-catalyst, auxiliary class Copper, name is Copper(II) ethylacetoacetate, and the molecular formula is 0, Synthetic Route of 14284-06-1.
Referemce:
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660968/,
Special Issue “Fundamentals and Applications of Copper-Based Catalysts”