Mukhopadhyay, Sukanya published the artcileMOCVD of copper films from bis(ethyl-3-oxo-butanoato)copper(II). Experiment and thermodynamic analysis, Safety of Copper(II) ethylacetoacetate, the publication is Proceedings – Electrochemical Society (2003), 1275-1283, database is CAplus.
Thin films of Cu were grown on SiO2/Si(100) substrates by metalorganic chem. vapor deposition (MOCVD) using the precursor, bis(ethyl-3-oxo-butanoato)Cu(II), and characterized by x-ray diffraction and Auger electron spectroscopy. The anal.-determined composition of Cu films grown by chem. vapor deposition is found to match well with that predicted by thermodn. anal. based on the minimization of the total Gibbs free energy of the expected reaction products. This was based on an enumeration of reaction products using mass spectrometric anal. of the precursor and chem. reasoning. Such thermodn. anal. of metalorganic chem. vapor deposition processes can, therefore, be helpful in determining deposition conditions that yield films of desired quality.
Proceedings – Electrochemical Society published new progress about 14284-06-1. 14284-06-1 belongs to copper-catalyst, auxiliary class Copper, name is Copper(II) ethylacetoacetate, and the molecular formula is 0, Safety of Copper(II) ethylacetoacetate.
Referemce:
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660968/,
Special Issue “Fundamentals and Applications of Copper-Based Catalysts”