Effect of the addition of O2 on copper etching using high density plasma of acetylacetonate/Ar was written by Park, Sung Yong;Lim, Eun Taek;Kim, Seung Hyun;Chung, Chee Won. And the article was included in Materials Science in Semiconductor Processing in 2022.SDS of cas: 20427-59-2 This article mentions the following:
In the present study, the high d. plasma etching of copper thin films masked with SiO2 was conducted using an acetylacetone/O2/Ar gas mixture As the concentration of acetylacetone increased, the etch rates for the copper film decreased but the etch selectivity increased. The addition of O2 gas to the acetylacetone/Ar mixture greatly improved the etch profile without the redeposition on the sidewalls of the copper film. This was attributed to the formation of copper compounds containing oxygen with the assistance of a polymeric protection layer. Good etch profile for the copper film was obtained using an acetylacetone/O2/Ar gas mixture with a 4:1 vol ratio of acetylacetone to O2. The proposed acetylacetone/O2/Ar gas mixture thus represents a potential candidate gas for the dry etching of copper films. In the experiment, the researchers used many compounds, for example, Cuprichydroxide (cas: 20427-59-2SDS of cas: 20427-59-2).
Cuprichydroxide (cas: 20427-59-2) belongs to copper catalysts. The applications of Copper-based nanoparticles have received great attention due to low toxicity and inexpensive, earth-abundant. Copper nanoparticles can also catalyze the coupling reaction of phenols, thiols, xanthogenates, nitrogen-containing nucleophiles, selenium ruthenium nucleophiles and the like.SDS of cas: 20427-59-2
Referemce:
Copper catalysis in organic synthesis – NCBI,
Special Issue “Fundamentals and Applications of Copper-Based Catalysts”