In 2019,Thin Solid Films included an article by Ryu, Jin Su; Lim, Eun Taek; Choi, Jae Sang; Chung, Chee Won. Application of 7789-45-9. The article was titled 《Dry etching of copper thin films in high density plasma of CH3COOH/Ar》. The information in the text is summarized as follows:
Inductively coupled plasma reactive ion etching of copper thin films patterned with SiO2 masks was carried out using CH3COOH/Ar gas. The etch rate, etch selectivity to SiO2 mask, and the etch profiles of copper films were examined The evolution study of the etch profile as a function of gas concentration and etch depth revealed the etch sequence and etch mechanism. In the optimized CH3COOH/Ar gas, the systematic approach on the etch characteristics of copper films was performed by changing the etch parameters including inductively coupled plasma (ICP) rf power, dc-bias voltage to substrate, and process pressure. As the ICP rf power and dc-bias voltage increased and the process pressure decreased, the etch rate increased and the etch profile improved. XPS was used to determine the etch mechanism in CH3COOH/Ar gas. Finally, the etching of copper films in the CH3COOH/Ar was achieved with good etch profile with a high degree of anisotropy. In the experiment, the researchers used many compounds, for example, Cupric bromide(cas: 7789-45-9Application of 7789-45-9)
Some reported applications of Cupric bromide(cas: 7789-45-9) are: catalyst in cross coupling reactions; co-catalyst in Sonogashira coupling; lewis acid in enantioselective addition of alkynes.Application of 7789-45-9
Referemce:
Copper catalysis in organic synthesis – NCBI,
Special Issue “Fundamentals and Applications of Copper-Based Catalysts”